High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment

Chien Hung Wu, Srikant Kumar Mohanty, Bo Wen Huang, Kow Ming Chang, Shui Jinn Wang, Kung Jeng Ma

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, staggered bottom-gate structure amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2 gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) with in situ hydrogenation to modulate the carrier concentration and improve interface quality. Subsequently, a neutral oxygen beam irradiation (NOBI) technique is applied, demonstrating that a suitable NOBI treatment could successfully enhance electrical characteristics by reducing native defect states and minimize the trap density in the back channel. A reverse retrograde channel (RRGC) with ultra-high/low carrier concentration is also formed to prevent undesired off-state leakage current and achieve a very low subthreshold swing. The resulting a-IGZO TFTs exhibit excellent electrical characteristics, including a low subthreshold swing of 72 mV dec−1 and high field-effect mobility of 35 cm2 V−1 s−1, due to conduction path passivation and stronger carrier confinement in the RRGC. The UV-vis spectroscopy shows optical transmittance above 90% in the visible range of the electromagnetic spectrum. The study confirms the H2 plasma with NOBI-treated a-IGZO/ZrO2 TFT is a promising candidate for transparent electronic device applications.

原文English
文章編號175202
期刊Nanotechnology
34
發行號17
DOIs
出版狀態Published - 2023 4月 23

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 一般化學
  • 一般材料科學
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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