With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering