High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing

Chien Hung Wu, Hau Yuan Huang, Shui-Jinn Wang, Kow Ming Chang

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.

原文English
文章編號6908043
頁(從 - 到)1031-1033
頁數3
期刊IEEE Electron Device Letters
35
發行號10
DOIs
出版狀態Published - 2014 十月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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