TY - JOUR
T1 - High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing
AU - Wu, Chien Hung
AU - Huang, Hau Yuan
AU - Wang, Shui Jinn
AU - Chang, Kow Ming
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/1
Y1 - 2014/10/1
N2 - With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.
AB - With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.
UR - https://www.scopus.com/pages/publications/85027922512
UR - https://www.scopus.com/inward/citedby.url?scp=85027922512&partnerID=8YFLogxK
U2 - 10.1109/LED.2014.2346774
DO - 10.1109/LED.2014.2346774
M3 - Article
AN - SCOPUS:85027922512
SN - 0741-3106
VL - 35
SP - 1031
EP - 1033
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 10
M1 - 6908043
ER -