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High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing
Chien Hung Wu
, Hau Yuan Huang
, Shui Jinn Wang
, Kow Ming Chang
微電子工程研究所
研究成果
:
Article
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同行評審
6
引文 斯高帕斯(Scopus)
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Keyphrases
High Mobility
100%
Amorphous InGaZnO (a-IGZO)
100%
Excimer Laser Annealing
100%
Atmospheric Pressure Plasma Jet
100%
248 Nm Excimer Laser
100%
On-state Current
20%
Electrical Characteristics
20%
Zirconium Dioxide
20%
Zinc Oxide Thin Films
20%
Subthreshold Swing
20%
Low Thermal Budget
20%
Oxide Interfaces
20%
Oxygen Vacancy
20%
Oxide Thin-film Transistors
20%
On-off Ratio
20%
Large-scale Fabrication
20%
Non-vacuum
20%
Channel Mobility
20%
Material Science
Indium
100%
Gallium
100%
Annealing
100%
Zinc Oxide
100%
Thin-Film Transistor
25%
Zirconia
25%
Oxide Interface
25%
Oxygen Vacancy
25%
Engineering
Atmospheric Pressure
100%
Excimer Laser
100%
Pressure Plasma
100%
Current Ratio
50%
Thin-Film Transistor
50%
Oxygen Vacancy
50%
Earth and Planetary Sciences
Excimer
100%
Plasma Jet
100%
Physics
Laser Annealing
100%