High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang, Chuan Feng Shih, Nai Chuan Chen, Pen Hsiu Chang, Kuo Shiun Liu

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

原文English
頁(從 - 到)2559-2563
頁數5
期刊Physica Status Solidi C: Conferences
1
發行號10
DOIs
出版狀態Published - 2004

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學

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