High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang; Chuan Feng Shih; Nai Chuan Chen; Pen Hsiu Chang; Kuo Shiun Liu

doi:10.1002/pssc.200405022

High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang
, Chuan Feng Shih
, Nai Chuan Chen
, Pen Hsiu Chang
, Kuo Shiun Liu

奈米積體電路工程博士學位學程

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

摘要

We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm²/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 10¹⁹ cm^-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

原文	English
頁（從 - 到）	2559-2563
頁數	5
期刊	Physica Status Solidi C: Conferences
卷	1
發行號	10
DOIs	https://doi.org/10.1002/pssc.200405022
出版狀態	Published - 2004

All Science Journal Classification (ASJC) codes

凝聚態物理學

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10.1002/pssc.200405022

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title = "High mobility InN films grown by metal-organic vapor phase epitaxy",

abstract = "We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.",

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year = "2004",

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T1 - High mobility InN films grown by metal-organic vapor phase epitaxy

AU - Chang, Chin An

AU - Shih, Chuan Feng

AU - Chen, Nai Chuan

AU - Chang, Pen Hsiu

AU - Liu, Kuo Shiun

PY - 2004

Y1 - 2004

N2 - We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

AB - We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

UR - https://www.scopus.com/pages/publications/7044220475

UR - https://www.scopus.com/pages/publications/7044220475#tab=citedBy

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DO - 10.1002/pssc.200405022

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SN - 1610-1634

VL - 1

SP - 2559

EP - 2563

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 10

ER -

High mobility InN films grown by metal-organic vapor phase epitaxy

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