Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O 3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm 2ċV-1ċs-1, a low threshold voltage of -1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJċm -2, which leads to StranskiKrastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering