High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

W. C. Liu, H. J. Pan, S. Y. Cheng, J. Y. Chen, W. C. Wang, K. B. Thei

研究成果: Conference contribution

摘要

In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

原文English
主出版物標題ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
編輯R.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
發行者IEEE Computer Society
頁面560-563
頁數4
ISBN(電子)2863322451, 9782863322451
出版狀態Published - 1999 一月 1
事件29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
持續時間: 1999 九月 131999 九月 15

出版系列

名字European Solid-State Device Research Conference
13-15 Sept. 1999
ISSN(列印)1930-8876

Other

Other29th European Solid-State Device Research Conference, ESSDERC 1999
國家Belgium
城市Leuven
期間99-09-1399-09-15

指紋

Heterojunction bipolar transistors
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

引用此文

Liu, W. C., Pan, H. J., Cheng, S. Y., Chen, J. Y., Wang, W. C., & Thei, K. B. (1999). High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. 於 R. P. Mertens, H. Grunbacher, H. E. Maes, & G. Declerck (編輯), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (頁 560-563). [1505564] (European Solid-State Device Research Conference; 卷 13-15 Sept. 1999). IEEE Computer Society.
Liu, W. C. ; Pan, H. J. ; Cheng, S. Y. ; Chen, J. Y. ; Wang, W. C. ; Thei, K. B. / High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. 編輯 / R.P. Mertens ; H. Grunbacher ; H.E. Maes ; G. Declerck. IEEE Computer Society, 1999. 頁 560-563 (European Solid-State Device Research Conference).
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title = "High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors",
abstract = "In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.",
author = "Liu, {W. C.} and Pan, {H. J.} and Cheng, {S. Y.} and Chen, {J. Y.} and Wang, {W. C.} and Thei, {K. B.}",
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Liu, WC, Pan, HJ, Cheng, SY, Chen, JY, Wang, WC & Thei, KB 1999, High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. 於 RP Mertens, H Grunbacher, HE Maes & G Declerck (編輯), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference., 1505564, European Solid-State Device Research Conference, 卷 13-15 Sept. 1999, IEEE Computer Society, 頁 560-563, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, Belgium, 99-09-13.

High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. / Liu, W. C.; Pan, H. J.; Cheng, S. Y.; Chen, J. Y.; Wang, W. C.; Thei, K. B.

ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. 編輯 / R.P. Mertens; H. Grunbacher; H.E. Maes; G. Declerck. IEEE Computer Society, 1999. p. 560-563 1505564 (European Solid-State Device Research Conference; 卷 13-15 Sept. 1999).

研究成果: Conference contribution

TY - GEN

T1 - High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

AU - Liu, W. C.

AU - Pan, H. J.

AU - Cheng, S. Y.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Thei, K. B.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

AB - In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

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M3 - Conference contribution

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Liu WC, Pan HJ, Cheng SY, Chen JY, Wang WC, Thei KB. High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. 於 Mertens RP, Grunbacher H, Maes HE, Declerck G, 編輯, ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. IEEE Computer Society. 1999. p. 560-563. 1505564. (European Solid-State Device Research Conference).