High-performance a-igzo thin-film transistor using Ta2O 5 gate dielectric

研究成果: Article

121 引文 (Scopus)

摘要

In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-κ dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta 2O5 exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drainsource current on/off ratio of 10 5, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm2/Vċs; these characteristics make it suitable for use as a switching transistor and in low-power applications.

原文English
文章編號5570921
頁(從 - 到)1245-1247
頁數3
期刊IEEE Electron Device Letters
31
發行號11
DOIs
出版狀態Published - 2010 十一月 1

指紋

Zinc Oxide
Gallium
Indium
Gate dielectrics
Thin film transistors
Zinc oxide
Threshold voltage
Oxide films
Transistors
Fabrication
Glass
Electric potential
Substrates
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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High-performance a-igzo thin-film transistor using Ta2O 5 gate dielectric. / Chiu, C. J.; Chang, S. P.; Chang, S. J.

於: IEEE Electron Device Letters, 卷 31, 編號 11, 5570921, 01.11.2010, p. 1245-1247.

研究成果: Article

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