TY - GEN
T1 - High-performance a-IGZO thin-film transistor with organic polymer dielectric layer
AU - Chiu, C. J.
AU - Chang, S. P.
AU - Lu, C. Y.
AU - Su, P. Y.
AU - Chang, S. J.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2011
Y1 - 2011
N2 - In this paper, we report the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with polymer gate dielectric prepared by spin coating on a glass substrate. The threshold voltage, carrier mobility, subthreshold swing, and on-off current ratio of the fabricated a-IGZO TFTs were found to be 1.6 V, 16.9cm 2/Vs, 0.69V/decade, and 1×10 5, respectively.
AB - In this paper, we report the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with polymer gate dielectric prepared by spin coating on a glass substrate. The threshold voltage, carrier mobility, subthreshold swing, and on-off current ratio of the fabricated a-IGZO TFTs were found to be 1.6 V, 16.9cm 2/Vs, 0.69V/decade, and 1×10 5, respectively.
UR - http://www.scopus.com/inward/record.url?scp=84862954508&partnerID=8YFLogxK
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U2 - 10.1063/1.3666681
DO - 10.1063/1.3666681
M3 - Conference contribution
AN - SCOPUS:84862954508
SN - 9780735410022
T3 - AIP Conference Proceedings
SP - 929
EP - 930
BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30
Y2 - 25 July 2010 through 30 July 2010
ER -