TY - JOUR
T1 - High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric
AU - Chiu, C. J.
AU - Chang, S. P.
AU - Chang, S. J.
N1 - Funding Information:
The authors would like to thank the National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan , R.O.C. for the financial support under Contract No. 100-2221-E-006-168 and 101-D0204-6 and the LED Lighting Research Center of NCKU for the assistance of device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , the National Cheng Kung University, Taiwan . This work was also supported in part by the Advanced Optoelectronic Technology Center , the National Cheng Kung University , under projects from the Ministry of Education.
PY - 2012/6/1
Y1 - 2012/6/1
N2 - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.
AB - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.
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U2 - 10.1016/j.tsf.2012.03.101
DO - 10.1016/j.tsf.2012.03.101
M3 - Article
AN - SCOPUS:84861750790
SN - 0040-6090
VL - 520
SP - 5455
EP - 5458
JO - Thin Solid Films
JF - Thin Solid Films
IS - 16
ER -