High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric

研究成果: Article

9 引文 (Scopus)

摘要

The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

原文English
頁(從 - 到)5455-5458
頁數4
期刊Thin Solid Films
520
發行號16
DOIs
出版狀態Published - 2012 六月 1

指紋

Zinc Oxide
gallium oxides
Gallium
Indium
Gate dielectrics
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
Polymers
transistors
polymers
thin films
Flexible electronics
Interface states
Carrier mobility
carrier mobility
Threshold voltage
threshold voltage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

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N2 - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

AB - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

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