摘要
The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 5455-5458 |
| 頁數 | 4 |
| 期刊 | Thin Solid Films |
| 卷 | 520 |
| 發行號 | 16 |
| DOIs | |
| 出版狀態 | Published - 2012 六月 1 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
引用此文
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High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric. / Chiu, C. J.; Chang, S. P.; Chang, S. J.
於: Thin Solid Films, 卷 520, 編號 16, 01.06.2012, p. 5455-5458.研究成果: Article
TY - JOUR
T1 - High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric
AU - Chiu, C. J.
AU - Chang, S. P.
AU - Chang, S. J.
PY - 2012/6/1
Y1 - 2012/6/1
N2 - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.
AB - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.
UR - http://www.scopus.com/inward/record.url?scp=84861750790&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861750790&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2012.03.101
DO - 10.1016/j.tsf.2012.03.101
M3 - Article
AN - SCOPUS:84861750790
VL - 520
SP - 5455
EP - 5458
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 16
ER -