@article{1d0ec2066b0a4bd4b0a1dd96cbee6e3f,
title = "High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric",
abstract = "The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.",
author = "Chiu, {C. J.} and Chang, {S. P.} and Chang, {S. J.}",
note = "Funding Information: The authors would like to thank the National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan , R.O.C. for the financial support under Contract No. 100-2221-E-006-168 and 101-D0204-6 and the LED Lighting Research Center of NCKU for the assistance of device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , the National Cheng Kung University, Taiwan . This work was also supported in part by the Advanced Optoelectronic Technology Center , the National Cheng Kung University , under projects from the Ministry of Education.",
year = "2012",
month = jun,
day = "1",
doi = "10.1016/j.tsf.2012.03.101",
language = "English",
volume = "520",
pages = "5455--5458",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier BV",
number = "16",
}