High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric

C. J. Chiu; S. P. Chang; S. J. Chang

doi:10.1016/j.tsf.2012.03.101

High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric

C. J. Chiu
, S. P. Chang
, S. J. Chang

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 ¹¹ cm ^{- 2}. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 ⁵, and 21.8 cm ²/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

原文	English
頁（從 - 到）	5455-5458
頁數	4
期刊	Thin Solid Films
卷	520
發行號	16
DOIs	https://doi.org/10.1016/j.tsf.2012.03.101
出版狀態	Published - 2012 6月 1

All Science Journal Classification (ASJC) codes

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2012.03.101

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title = "High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric",

abstract = "The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.",

author = "Chiu, \{C. J.\} and Chang, \{S. P.\} and Chang, \{S. J.\}",

note = "Funding Information: The authors would like to thank the National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan , R.O.C. for the financial support under Contract No. 100-2221-E-006-168 and 101-D0204-6 and the LED Lighting Research Center of NCKU for the assistance of device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , the National Cheng Kung University, Taiwan . This work was also supported in part by the Advanced Optoelectronic Technology Center , the National Cheng Kung University , under projects from the Ministry of Education.",

year = "2012",

month = jun,

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doi = "10.1016/j.tsf.2012.03.101",

language = "English",

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AU - Chiu, C. J.

AU - Chang, S. P.

AU - Chang, S. J.

N1 - Funding Information: The authors would like to thank the National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan , R.O.C. for the financial support under Contract No. 100-2221-E-006-168 and 101-D0204-6 and the LED Lighting Research Center of NCKU for the assistance of device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology , the National Cheng Kung University, Taiwan . This work was also supported in part by the Advanced Optoelectronic Technology Center , the National Cheng Kung University , under projects from the Ministry of Education.

PY - 2012/6/1

Y1 - 2012/6/1

N2 - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

AB - The fabrication of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a spin-coated polymer gate dielectric on a glass substrate is reported. The interface state density at the poly(4-vinylphenol)/a- IGZO interface is only around 4.05 × 10 11 cm - 2. The TFTs' threshold voltage, subthreshold swing, on-off current ratio, and carrier mobility are 2.6 V, 1.3 V/decade, 1 × 10 5, and 21.8 cm 2/V s, respectively. These characteristics indicate that the TFTs are suitable for use as nonvolatile memory devices and in flexible electronic applications.

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DO - 10.1016/j.tsf.2012.03.101

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SN - 0040-6090

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JO - Thin Solid Films

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IS - 16

ER -

High-performance amorphous indium-gallium-zinc oxide thin-film transistors with polymer gate dielectric

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