High performance bottom-gate-type amorphous InGaZnO flexible transparent thin-film transistors deposited on PET substrates at low temperature

Hsin Ying Lee, Wan Yi Ye, Yung Hao Lin, Li Ren Lou, Ching Ting Lee

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The InGaZnO channel layer of bottom-gate-type flexible transparent thin-film transistors was deposited on polyethylene terephthalate substrates using a magnetron radio frequency cosputter system with a single InGaZnO target. The composition of the InGaZnO channel layer was controlled by sputtering at various Ar/O2 gas ratios. A 15-nm-thick SiO y insulator film was used to passivate the InGaZnO channel layer. Much better performances of the passivated devices were obtained, which verified the passivation function. To study the bending stability of the resulting flexible transparent thin-film transistors, a stress test with a bending radius of 1.17 cm for 1,500 s was carried out, which showed a variation in the effective filed-effect mobility and the threshold voltage of the unpassivated and passivated devices being maintained within 10 and 8%, respectively.

原文English
頁(從 - 到)780-785
頁數6
期刊Journal of Electronic Materials
43
發行號3
DOIs
出版狀態Published - 2014 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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