TY - GEN
T1 - High performance bulk acoustic resonator based on ZnO:Li piezofilms with high crystallinity and uniformity
AU - Lin, Chun Cheng
AU - Tang, Jian Fu
AU - Chu, Sheng-Yuan
PY - 2013/1/1
Y1 - 2013/1/1
N2 - This work describes a bulk acoustic resonator (BAR) based on Pt/L 0.06Z0.94O/Pt/Ti/Si structure. The L0.06Z 0.94O piezofilms are grown by radio frequency magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The structural and chemical evolutions through various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (14.87 pC/N) of the LZO film is obtained after 120 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, we adopt the wet chemical etching method and the lift-off process to pattern the piezofilms and electrodes of the BAR device, respectively. The fabricated resonator exhibits high quality factor (Q = 1112) at ∼500 MHz. The experimental results verify the crystallinity and the uniformity of the piezofilms play crucial roles of the BAR devices.
AB - This work describes a bulk acoustic resonator (BAR) based on Pt/L 0.06Z0.94O/Pt/Ti/Si structure. The L0.06Z 0.94O piezofilms are grown by radio frequency magnetron sputtering system and post-treated with ultraviolet (UV)-ozone illumination. The structural and chemical evolutions through various illumination times of the predominantly c-axis orientation LZO films are investigated. The largest piezoelectric coefficient (14.87 pC/N) of the LZO film is obtained after 120 min UV-ozone illumination, which can be ascribed to better crystallization and fewer oxygen-related defects. Furthermore, we adopt the wet chemical etching method and the lift-off process to pattern the piezofilms and electrodes of the BAR device, respectively. The fabricated resonator exhibits high quality factor (Q = 1112) at ∼500 MHz. The experimental results verify the crystallinity and the uniformity of the piezofilms play crucial roles of the BAR devices.
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U2 - 10.1109/NMDC.2013.6707456
DO - 10.1109/NMDC.2013.6707456
M3 - Conference contribution
AN - SCOPUS:84893789551
SN - 9781479933877
T3 - IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
SP - 67
EP - 69
BT - IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
PB - IEEE Computer Society
T2 - 2013 IEEE 8th Nanotechnology Materials and Devices Conference, IEEE NMDC 2013
Y2 - 6 October 2013 through 9 October 2013
ER -