High-performance depletion-mode multiple-strip ZnO-based fin field-effect transistors

Ching Ting Lee, Hsin Ying Lee, Hung Lin Huang, Chun Yen Tseng

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

To enhance the performances of the depletion-mode zinc-oxide (ZnO)-based MOSFETs, the multiple-channel and multiple-gate fin structures were deposited using the magnetron sputter system and patterned using the laser interference photolithography technique. The multiple-channel fin structure possessed the additional sidewall depletion width to enhance the gate controllability. The multiple-gate structure had a shorter source-gate distance and a shorter gate length between two gates to promote the gate operating performances. Therefore, the drain-source saturation current of the multiple-strip ZnO-based fin MOSFETs operated at a drain-source voltage of 10 V and a gate-source voltage of 0 V was improved to 13.7 mA/mm in comparison with 11.5 mA/mm of the conventional singlechannel and single-gate ZnO-based MOSFETs. Furthermore, the corresponding maximum transconductance was enhanced from 4.1 to 6.9 mS/mm.

原文English
文章編號7323807
頁(從 - 到)446-451
頁數6
期刊IEEE Transactions on Electron Devices
63
發行號1
DOIs
出版狀態Published - 2016 一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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