High-performance double δ-doped channel si metal semiconductor field-effect transistors

San Lein Wu, Shui Jinn Wang, Chen Chin Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we report the double boron δ-doped Si metal semiconductor field-effect transistors (MESFETs) grown by molecular beam epitaxy (MBE). It is found that when a double boron δ-doped layer has been used as a conducting channel, the devices exhibit the excellent property of not only higher drain-to-source saturation current (IDss) but also enhancement in extrinsic transconductance. MESFETs with a variety of boron doses of δ-doped layers have been fabricated and studied. The measured transconductance is enhanced two to five times over that of the single δ case.

原文English
頁(從 - 到)L1195-L1197
期刊Japanese Journal of Applied Physics
33
發行號9
DOIs
出版狀態Published - 1994 九月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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