In this paper, we report the double boron δ-doped Si metal semiconductor field-effect transistors (MESFETs) grown by molecular beam epitaxy (MBE). It is found that when a double boron δ-doped layer has been used as a conducting channel, the devices exhibit the excellent property of not only higher drain-to-source saturation current (IDss) but also enhancement in extrinsic transconductance. MESFETs with a variety of boron doses of δ-doped layers have been fabricated and studied. The measured transconductance is enhanced two to five times over that of the single δ case.
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)