We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional InxGa1-xAs/GaAs pseudomorphic heterostructures with similar gate length (2 μm) ever reported, were achieved.
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)