High performance double delta doping gaas/in0.25Ga0.75as/gaas pseudomorphic heterostructure

M. Shieh, W. C. Hsu, C. L. Wu, T. S. Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional InxGa1-xAs/GaAs pseudomorphic heterostructures with similar gate length (2 μm) ever reported, were achieved.

原文English
頁(從 - 到)L303-L305
期刊Japanese Journal of Applied Physics
32
發行號3 A
DOIs
出版狀態Published - 1993 三月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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