High performance GaN-based hydrogen sensors

W. C. Hsu, J. R. Huang, K. W. Lin, H. I. Chen, W. C. Liu

研究成果: Conference contribution

摘要

The hydrogen sensing characteristics of the catalytic Pd/GaN and Pd/InGaP MS diodes are systematically studied and compared over wide hydrogen concentration and temperature regimes. Experimentally, upon exposing to hydrogen-containing gases, both forward- and reverse-biased currents of both studied devices are substantially increased with increasing the hydrogen concentration. In other words, both studied devices can be operated under applied bipolarly voltages. Furthermore, particularly under very wide hydrogen concentration regimes, the studied Pd/GaN MS diode can withstand higher temperature operation with remarkable forward and reverse sensitivities of hydrogen detection. In addition, due to larger Schottky barrier height lowering effect, the hydrogen adsorption performance for the Pd/GaN MS diode manifests the superior sensitivity of Schottky barrier variation, especially at higher temperature operation. In contrast, the studied Pd/InGaP MS diode offers remarkable shorter response time of hydrogen adsorption process than the Pd/GaN one particularly at lower temperature operation and is suitable for the lower hydrogen concentration detection.

原文English
主出版物標題ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
發行者Electrochemical Society Inc.
頁面163-182
頁數20
版本2
ISBN(電子)9781566775519
ISBN(列印)9781566775519
DOIs
出版狀態Published - 2007
事件46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
持續時間: 2007 5月 62007 5月 10

出版系列

名字ECS Transactions
號碼2
6
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

Other46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
國家/地區United States
城市Chicago, IL
期間07-05-0607-05-10

All Science Journal Classification (ASJC) codes

  • 一般工程

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