High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

T. M. Kuan; S. J. Chang; Y. K. Su; J. C. Lin; S. C. Wei; C. K. Wang; C. I. Huang; W. H. Lan; J. A. Bardwell; H. Tang; W. J. Lin; Y. T. Cherng

doi:10.1016/j.jcrysgro.2004.08.089

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

T. M. Kuan, S. J. Chang, Y. K. Su, J. C. Lin, S. C. Wei, C. K. Wang, C. I. Huang, W. H. Lan, J. A. Bardwell, H. Tang, W. J. Lin, Y. T. Cherng

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Nitride-based GaN/In_0.12Ga_0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully fabricated. The as-grown layers exhibited a very smooth surface. The DC characteristics of these HFETs were substantially improved over those previously reported. Devices with a 0.75 μm gate length showed a maximum drain current (I_DS) of 421 mA/mm, and a maximum g_m of about 85.6 mS/mm at V_GS between -0.5 and -3V. The device which had a very good pinch-off with source-drain (S-D) leakage current was negligibly small, in the range of 10^-1-10^-2mA/mm. The RF characteristic of devices showed the current gain cutoff frequency, f _T, was 7.45 GHz and the maximum oscillation frequency, f _MAX, was 12.36 GHz.

原文	English
頁（從 - 到）	300-304
頁數	5
期刊	Journal of Crystal Growth
卷	272
發行號	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.08.089
出版狀態	Published - 2004 12月 10

All Science Journal Classification (ASJC) codes

凝聚態物理學
無機化學
材料化學

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10.1016/j.jcrysgro.2004.08.089

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@article{2a7b77a17ce94351a76a536b221d281c,

title = "High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers",

abstract = "Nitride-based GaN/In0.12Ga0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully fabricated. The as-grown layers exhibited a very smooth surface. The DC characteristics of these HFETs were substantially improved over those previously reported. Devices with a 0.75 μm gate length showed a maximum drain current (IDS) of 421 mA/mm, and a maximum gm of about 85.6 mS/mm at VGS between -0.5 and -3V. The device which had a very good pinch-off with source-drain (S-D) leakage current was negligibly small, in the range of 10-1-10-2mA/mm. The RF characteristic of devices showed the current gain cutoff frequency, f T, was 7.45 GHz and the maximum oscillation frequency, f MAX, was 12.36 GHz.",

author = "Kuan, {T. M.} and Chang, {S. J.} and Su, {Y. K.} and Lin, {J. C.} and Wei, {S. C.} and Wang, {C. K.} and Huang, {C. I.} and Lan, {W. H.} and Bardwell, {J. A.} and H. Tang and Lin, {W. J.} and Cherng, {Y. T.}",

note = "Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. We gratefully acknowledge the technical assistance of Dr. J.B. Webb for discussing the growth issue and C. Storey for the RF measurements. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2004",

month = dec,

day = "10",

doi = "10.1016/j.jcrysgro.2004.08.089",

language = "English",

volume = "272",

pages = "300--304",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4 SPEC. ISS.",

}

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers. / Kuan, T. M.; Chang, S. J.; Su, Y. K.; Lin, J. C.; Wei, S. C.; Wang, C. K.; Huang, C. I.; Lan, W. H.; Bardwell, J. A.; Tang, H.; Lin, W. J.; Cherng, Y. T.

於: Journal of Crystal Growth, 卷 272, 編號 1-4 SPEC. ISS., 10.12.2004, p. 300-304.

研究成果: Article › 同行評審

TY - JOUR

T1 - High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

AU - Kuan, T. M.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Lin, J. C.

AU - Wei, S. C.

AU - Wang, C. K.

AU - Huang, C. I.

AU - Lan, W. H.

AU - Bardwell, J. A.

AU - Tang, H.

AU - Lin, W. J.

AU - Cherng, Y. T.

N1 - Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. We gratefully acknowledge the technical assistance of Dr. J.B. Webb for discussing the growth issue and C. Storey for the RF measurements. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/12/10

Y1 - 2004/12/10

N2 - Nitride-based GaN/In0.12Ga0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully fabricated. The as-grown layers exhibited a very smooth surface. The DC characteristics of these HFETs were substantially improved over those previously reported. Devices with a 0.75 μm gate length showed a maximum drain current (IDS) of 421 mA/mm, and a maximum gm of about 85.6 mS/mm at VGS between -0.5 and -3V. The device which had a very good pinch-off with source-drain (S-D) leakage current was negligibly small, in the range of 10-1-10-2mA/mm. The RF characteristic of devices showed the current gain cutoff frequency, f T, was 7.45 GHz and the maximum oscillation frequency, f MAX, was 12.36 GHz.

AB - Nitride-based GaN/In0.12Ga0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully fabricated. The as-grown layers exhibited a very smooth surface. The DC characteristics of these HFETs were substantially improved over those previously reported. Devices with a 0.75 μm gate length showed a maximum drain current (IDS) of 421 mA/mm, and a maximum gm of about 85.6 mS/mm at VGS between -0.5 and -3V. The device which had a very good pinch-off with source-drain (S-D) leakage current was negligibly small, in the range of 10-1-10-2mA/mm. The RF characteristic of devices showed the current gain cutoff frequency, f T, was 7.45 GHz and the maximum oscillation frequency, f MAX, was 12.36 GHz.

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DO - 10.1016/j.jcrysgro.2004.08.089

M3 - Article

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VL - 272

SP - 300

EP - 304

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4 SPEC. ISS.

ER -

High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

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