High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers

T. M. Kuan, S. J. Chang, Y. K. Su, J. C. Lin, S. C. Wei, C. K. Wang, C. I. Huang, W. H. Lan, J. A. Bardwell, H. Tang, W. J. Lin, Y. T. Cherng

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7 引文 斯高帕斯(Scopus)

摘要

Nitride-based GaN/In0.12Ga0.88N heterostructure field effect transistors (HFETs) with semi-insulating Mg-doped GaN current blocking layers were successfully fabricated. The as-grown layers exhibited a very smooth surface. The DC characteristics of these HFETs were substantially improved over those previously reported. Devices with a 0.75 μm gate length showed a maximum drain current (IDS) of 421 mA/mm, and a maximum gm of about 85.6 mS/mm at VGS between -0.5 and -3V. The device which had a very good pinch-off with source-drain (S-D) leakage current was negligibly small, in the range of 10-1-10-2mA/mm. The RF characteristic of devices showed the current gain cutoff frequency, f T, was 7.45 GHz and the maximum oscillation frequency, f MAX, was 12.36 GHz.

原文English
頁(從 - 到)300-304
頁數5
期刊Journal of Crystal Growth
272
發行號1-4 SPEC. ISS.
DOIs
出版狀態Published - 2004 12月 10

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 無機化學
  • 材料化學

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