TY - JOUR
T1 - High-performance ingazno thin-film transistors using HfLaO gate dielectric
AU - Su, N. C.
AU - Wang, S. J.
AU - Chin, Albert
N1 - Funding Information:
Manuscript received September 7, 2009. First published November 6, 2009; current version published November 20, 2009. This work was supported in part by the National Science Council of Taiwan and helped by the National Nano Device Laboratory. The review of this letter was arranged by Editor A. Nathan.
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/12
Y1 - 2009/12
N2 - In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
AB - In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low VT of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm 2V.s, and large IonIoff ratio of 5 × 107. These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.
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U2 - 10.1109/LED.2009.2033392
DO - 10.1109/LED.2009.2033392
M3 - Article
AN - SCOPUS:70549111131
SN - 0741-3106
VL - 30
SP - 1317
EP - 1319
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 12
M1 - 5313883
ER -