High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

Bo Yuan Su; Sheng Yuan Chu; Yung Der Juang; Han Chang Chen

doi:10.1063/1.4804993

High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

Bo Yuan Su, Sheng Yuan Chu, Yung Der Juang, Han Chang Chen

研究成果: Article › 同行評審

80 引文斯高帕斯（Scopus）

摘要

Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 °C, TFT devices showed an improved field-effect mobility of 1.73 cm² V ^-1 s^-1, a subthreshold slope (S) of 0.32 V dec ^-1, an on/off-current ratio greater than 1.3 × 10⁷, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (N_s) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.

原文	English
文章編號	192101
期刊	Applied Physics Letters
卷	102
發行號	19
DOIs	https://doi.org/10.1063/1.4804993
出版狀態	Published - 2013 5月 13

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4804993

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title = "High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing",

abstract = "Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 °C, TFT devices showed an improved field-effect mobility of 1.73 cm2 V -1 s-1, a subthreshold slope (S) of 0.32 V dec -1, an on/off-current ratio greater than 1.3 × 107, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (Ns) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.",

author = "Su, {Bo Yuan} and Chu, {Sheng Yuan} and Juang, {Yung Der} and Chen, {Han Chang}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Grant Nos. NSC 101-2623-E-006-003-ET and NSC 101-3113-E-006-014 and NSC 102-3113-E-006-003 and NSC 101-2622-E-006-014-CC3.",

year = "2013",

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doi = "10.1063/1.4804993",

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AU - Su, Bo Yuan

AU - Chu, Sheng Yuan

AU - Juang, Yung Der

AU - Chen, Han Chang

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Grant Nos. NSC 101-2623-E-006-003-ET and NSC 101-3113-E-006-014 and NSC 102-3113-E-006-003 and NSC 101-2622-E-006-014-CC3.

PY - 2013/5/13

Y1 - 2013/5/13

N2 - Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 °C, TFT devices showed an improved field-effect mobility of 1.73 cm2 V -1 s-1, a subthreshold slope (S) of 0.32 V dec -1, an on/off-current ratio greater than 1.3 × 107, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (Ns) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.

AB - Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 °C, TFT devices showed an improved field-effect mobility of 1.73 cm2 V -1 s-1, a subthreshold slope (S) of 0.32 V dec -1, an on/off-current ratio greater than 1.3 × 107, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (Ns) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.

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High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

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