TY - JOUR
T1 - High-Performance Non-Volatile Flash Photomemory via Highly Oriented Quasi-2D Perovskite
AU - Chao, Ya Hui
AU - Chen, Jian Cheng
AU - Yang, Dong Lin
AU - Tseng, You Jie
AU - Hsu, Chao Hsien
AU - Chen, Jung Yao
N1 - Funding Information:
The authors thank the financial supports from the Ministry of Science and Technology (MOST) in Taiwan (MOST 109-2636-E-194-001, MOST 109-2636-E-006-027- and MOST 110-2636-E-006-025-). The authors acknowledge the use of JEOL JEM-2100F Cs STEM[EM000800] and [EM003600]of MOST 110-2731-M-006-001 belonging to the Core Facility Center of National Cheng Kung University. The authors also gratefully appreciate the Precision Instruments Center, National Sun Yat-sen University for transmission electron microscopy analysis. Finally, the authors thank Dr. B.-H. Lin at National Synchrotron Radiation Research Center for the help of time-solved photoluminescence analysis.
Funding Information:
The authors thank the financial supports from the Ministry of Science and Technology (MOST) in Taiwan (MOST 109‐2636‐E‐194‐001, MOST 109‐2636‐E‐006‐027‐ and MOST 110‐2636‐E‐006‐025‐). The authors acknowledge the use of JEOL JEM‐2100F Cs STEM[EM000800] and [EM003600]of MOST 110‐2731‐M‐006‐001 belonging to the Core Facility Center of National Cheng Kung University. The authors also gratefully appreciate the Precision Instruments Center, National Sun Yat‐sen University for transmission electron microscopy analysis. Finally, the authors thank Dr. B.‐H. Lin at National Synchrotron Radiation Research Center for the help of time‐solved photoluminescence analysis.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/5/9
Y1 - 2022/5/9
N2 - Solution-processable organic–inorganic hybrid perovskite materials have been applied to a variety of optoelectronic devices due to its long exciton lifetime and small binding energy. It has emerged as promising front-runners for next-generation non-volatile flash photomemory devices. However, the effect of crystal orientation of perovskite on the performance of photomemory still has not fully developed. Herein, non-volatile flash photomemory with quasi-2D perovskite/polystyrene-block-poly(ethylene oxide) (PS-b-PEO) as photoactive floating-gate and p-type semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) as the chare-transporting layer is successfully demonstrated. By adding phenylethylammonium bromide (PEABr) in formamidinium lead bromide perovskite (FAPbBr3), the crystal orientation of quasi-2D perovskite is highly improved, which results in raised charge transfer efficiency from 76% to 90% compared to the pure FAPbBr3. Furthermore, ON/OFF current ratio of 104, low photo-programming time of 5 ms under light intensity of 0.85 mW cm−2, charge transfer rate of 0.063 ns−1, and data storage capacity of over 7 bits (128 levels) in one cell can be achieved. In addition, the correlation between photo-responsive current and photoluminescence (PL) is first examined by in operando PL measurement, which provides a new platform to explore the charge transfer process in photomemory.
AB - Solution-processable organic–inorganic hybrid perovskite materials have been applied to a variety of optoelectronic devices due to its long exciton lifetime and small binding energy. It has emerged as promising front-runners for next-generation non-volatile flash photomemory devices. However, the effect of crystal orientation of perovskite on the performance of photomemory still has not fully developed. Herein, non-volatile flash photomemory with quasi-2D perovskite/polystyrene-block-poly(ethylene oxide) (PS-b-PEO) as photoactive floating-gate and p-type semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) as the chare-transporting layer is successfully demonstrated. By adding phenylethylammonium bromide (PEABr) in formamidinium lead bromide perovskite (FAPbBr3), the crystal orientation of quasi-2D perovskite is highly improved, which results in raised charge transfer efficiency from 76% to 90% compared to the pure FAPbBr3. Furthermore, ON/OFF current ratio of 104, low photo-programming time of 5 ms under light intensity of 0.85 mW cm−2, charge transfer rate of 0.063 ns−1, and data storage capacity of over 7 bits (128 levels) in one cell can be achieved. In addition, the correlation between photo-responsive current and photoluminescence (PL) is first examined by in operando PL measurement, which provides a new platform to explore the charge transfer process in photomemory.
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U2 - 10.1002/adfm.202112521
DO - 10.1002/adfm.202112521
M3 - Article
AN - SCOPUS:85124098057
SN - 1616-301X
VL - 32
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 19
M1 - 2112521
ER -