@inproceedings{7d3c62a6260d4b6c8d42fb719ecfcd75,
title = "High-performance n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier gate heterostructure field-effect transistor",
abstract = "A new heterostructure field-effect transistor (HFET) using an n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p+ n0.49Ga0.51P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown voltage is improved substantially. Experimentally, for a lxl00 μm2 device, a high gate-drain breakdown voltage of 52 V and high drain-source operation voltage of 20 V with low leakage current are obtained. The high breakdown characteristics of the studied device indicate the device with n+-GaAs/p+-In0.49Ga0.51P/n-GaAs high-barrier-gate structure is suitable for high-power circuit applications.",
author = "Yu, {Kuo Hui} and Liu, {Wen Chau} and Lin, {Kun Wei} and Lin, {Kuan Po} and Yen, {Chih Hung} and Wu, {Cheng Zu} and Chen, {Chem Yuan} and Wang, {Chih Kai}",
note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",
year = "2000",
doi = "10.1109/COMMAD.2000.1022934",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "230--233",
editor = "Broekman, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",
booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",
address = "United States",
}