High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Jun Jie Wang; Wen Hsi Lee; Jia Chung Ho; Tang Shiang Hu

doi:10.1007/s10854-008-9621-5

High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

Jun Jie Wang, Wen Hsi Lee, Jia Chung Ho, Tang Shiang Hu

奈米積體電路工程碩士學位學程

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 ⁵, threshold voltage of -10 V and mobility of 0.15 cm ²V- ¹ s- ¹.

原文	English
頁（從 - 到）	S355-S358
期刊	Journal of Materials Science: Materials in Electronics
卷	20
發行號	SUPPL. 1
DOIs	https://doi.org/10.1007/s10854-008-9621-5
出版狀態	Published - 2009 1月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
電氣與電子工程

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10.1007/s10854-008-9621-5

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title = "High performance OTFTs using surface-modified nanocomposite dielectric gate insulator",

abstract = "A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.",

author = "Wang, {Jun Jie} and Lee, {Wen Hsi} and Ho, {Jia Chung} and Hu, {Tang Shiang}",

note = "Funding Information: Acknowledgements This work was partially supported by National Science Council, the Republic of China under contract no. NSC96-2221-E-006-125.",

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AU - Wang, Jun Jie

AU - Lee, Wen Hsi

AU - Ho, Jia Chung

AU - Hu, Tang Shiang

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AB - A strategy for high-performance OTFT gate insulators is a multi-layer structure. The composite insulator adjacent to pentacene minimized trapping at the interface and exhibits performance including on-off current ratio of about 10 5, threshold voltage of -10 V and mobility of 0.15 cm 2V- 1 s- 1.

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High performance OTFTs using surface-modified nanocomposite dielectric gate insulator

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