High-performance SiGe heterostructure FET grown on silicon-on-insulator

Pei Wei Chien, San Lein Wu, Shoou Jinn Chang, Shinji Koh, Yasuhiro Shiraki

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.

原文English
頁(從 - 到)367-370
頁數4
期刊Materials Science in Semiconductor Processing
8
發行號1-3 SPEC. ISS.
DOIs
出版狀態Published - 2005 2月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

指紋

深入研究「High-performance SiGe heterostructure FET grown on silicon-on-insulator」主題。共同形成了獨特的指紋。

引用此