High-performance solution-processed amorphous ZrInZnO thin-film transistors

Ya Wei Chung, Fang Chung Chen, Ying Ping Chen, Yu Ze Chen, Yu Lun Chueh

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We have developed amorphous zirconium-indium-zinc-oxide (ZrInZnO) as the channel layer to fabricate thin film transistors through a solution process. The best ZrInZnO transistor exhibited a field effect mobility of 3.80 cm 2/Vs, an on-off ratio of ∼10 7, a threshold voltage of 0.44 V and a subthreshold swing of 0.42 V/dec. The function of the Zr element was investigated through electrical and thin-film characterization. We found that Zr atoms behaved as effective carrier suppressors and the presence of Zr elements inhibited the crystallization of the InZnO phase.

原文English
頁(從 - 到)400-402
頁數3
期刊Physica Status Solidi - Rapid Research Letters
6
發行號9-10
DOIs
出版狀態Published - 2012 十月 1

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學

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