High performance sputtered/anodized tantalum oxide capacitors

S. G. Byeon; Y. Tzeng

High performance sputtered/anodized tantalum oxide capacitors

S. G. Byeon, Y. Tzeng

研究成果: Conference article › 同行評審

摘要

High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

原文	English
頁（從 - 到）	722-725
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
出版狀態	Published - 1988 12月 1
事件	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA 持續時間: 1988 12月 11 → 1988 12月 14

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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abstract = "High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.",

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year = "1988",

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AU - Byeon, S. G.

AU - Tzeng, Y.

PY - 1988/12/1

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N2 - High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

AB - High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

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M3 - Conference article

AN - SCOPUS:0024176894

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Technical Digest - International Electron Devices Meeting 1988

Y2 - 11 December 1988 through 14 December 1988

ER -

High performance sputtered/anodized tantalum oxide capacitors

摘要

All Science Journal Classification (ASJC) codes

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引用此