High performance sputtered/anodized tantalum oxide capacitors

S. G. Byeon, Y. Tzeng

研究成果: Conference article同行評審

14 引文 斯高帕斯(Scopus)

摘要

High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.

原文English
頁(從 - 到)722-725
頁數4
期刊Technical Digest - International Electron Devices Meeting
出版狀態Published - 1988 十二月 1
事件Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
持續時間: 1988 十二月 111988 十二月 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「High performance sputtered/anodized tantalum oxide capacitors」主題。共同形成了獨特的指紋。

引用此