High-performance films (400-1600 angstrom) were formed by anodizing sputtered tantalum oxide films. The electrical properties of these two-step oxidized and sputtered/anodized films are compared with those of films prepared by anodization or sputtering only. The sputtered/anodized tantalum oxide capacitors have lower dissipation factors, higher breakdown fields, narrower breakdown distributions, and lower leakage currents. The sputtered/anodized tantalum oxide films have shown to be useful for high-charge-storage capacitor applications.
|頁（從 - 到）||722-725|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1988 12月 1|
|事件||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
持續時間: 1988 12月 11 → 1988 12月 14
All Science Journal Classification (ASJC) codes