High performance three-dimensional double-stacked multiple-nanochannel and quadruple-nanogate zno-based fin metal-oxide-semiconductor field-effect transistors

Hsin Ying Lee, Li Yi Jian, Hung Lin Huang, Ching Ting Lee

研究成果: Article同行評審

摘要

To improve performances of zinc oxide (ZnO)-based metal-oxide-semiconductor field-effect transistors (MOSFETs), the double-stacked multiple-nanochannel and quadruple-nanogate (DMCQG) ZnO-based MOSFETs were fabricated using the laser interference photolithography technique and the hardened photoresist technique. The three dimensional double-stacked structure of the ZnO-based fin MOSFETs possessed the same device area as the single structure. However, the drain-source saturation current and the maximum transconductance of the double-stacked MCQG ZnO-based fin MOSFETs were, respectively, improved from 13.7 mA mm−1 to 25.5 mA mm−1 and from 6.9 mS mm−1 to 13.5 mS mm−1 in compared with the single MCQG ZnO-based fin MOSFETs. Besides, the gate leakage current of both the double-stacked structure and the single structure was kept at the order of nA.

原文English
頁(從 - 到)Q157-Q160
期刊ECS Journal of Solid State Science and Technology
6
發行號12
DOIs
出版狀態Published - 2017

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料

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