High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

C. L. Wu; W. C. Hsu; M. S. Tsai; H. M. Shieh

doi:10.1049/el:19941028

High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

C. L. Wu, W. C. Hsu, M. S. Tsai, H. M. Shieh

微電子工程研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

原文	English
頁（從 - 到）	1537-1539
頁數	3
期刊	Electronics Letters
卷	30
發行號	18
DOIs	https://doi.org/10.1049/el:19941028
出版狀態	Published - 1994

All Science Journal Classification (ASJC) codes

電氣與電子工程

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10.1049/el:19941028

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引用此

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abstract = "A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.",

author = "Wu, {C. L.} and Hsu, {W. C.} and Tsai, {M. S.} and Shieh, {H. M.}",

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PY - 1994

Y1 - 1994

N2 - A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

AB - A three-terminal 5-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability.

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High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

摘要

All Science Journal Classification (ASJC) codes

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指紋

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