High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

Chang Da Tsai, Hung Pin Shiao, Ching Ting Lee, Yuan Kuang Tu

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated. The dark current density of the photodetectors is about 7 μA/cm2. Its responsivity at 0.83-μm wavelength is about 0.48 A/W. After thermal storage at 150°C for 10 h, no performance degradation was found in the novel photodetectors.

原文English
頁(從 - 到)660-662
頁數3
期刊IEEE Photonics Technology Letters
9
發行號5
DOIs
出版狀態Published - 1997 五月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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