High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

Chang Da Tsai, Yow Jon Lin, Day Shan Liu, Ching Ting Lee

研究成果: Conference article同行評審

摘要

We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

原文English
頁(從 - 到)724-731
頁數8
期刊Proceedings of SPIE - The International Society for Optical Engineering
4078
出版狀態Published - 2000 一月 1
事件Optoelectronic Materials and Devices II - Taipei, Taiwan
持續時間: 2000 七月 262000 七月 28

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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