A δ -doped In0.425 Al0.575 As In0.425 Ga0.575 AsGaAs metamorphic high electron mobility transistor with an In0.425 Ga0.575 As channel to effectively relieve the impact-ionization effects has been successfully fabricated by the molecular beam epitaxy system. With the designs of an In0.425 Ga0.575 As channel layer and a wide-bangap In0.425 Al0.575 As Schottky-contact layer, good carrier confinement, improved breakdown, low output conductance, and high voltage gain with good linearity have been simultaneously achieved. We have also comprehensively investigated the microwave and power performances as a function of VGS and VDS, respectively. Experimentally, the unity-gain cutoff frequency (ft) and the maximum oscillation frequency (fmax) slightly decrease with VDS of above 2 V. However, the power gain and the output power increase as VDS increases from 1 to 5 V. Furthermore, the proposed device has also demonstrated good intermodulation distortion characteristics at lower biases, indicating its promise for the large-scale and low-voltage millimeter-wave integrated circuit applications.
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