High power nitride based light emitting diodes with Ni/ITO p-type contacts

Yu-Cheng Lin, Shoou-Jinn Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen, C. W. Kuo

研究成果: Article

35 引文 斯高帕斯(Scopus)

摘要

Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.

原文English
頁(從 - 到)1565-1568
頁數4
期刊Solid-State Electronics
47
發行號9
DOIs
出版狀態Published - 2003 九月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

引用此

Lin, Y-C., Chang, S-J., Su, Y. K., Chang, C. S., Shei, S. C., Ke, J. C., Lo, H. M., Chen, S. C., & Kuo, C. W. (2003). High power nitride based light emitting diodes with Ni/ITO p-type contacts. Solid-State Electronics, 47(9), 1565-1568. https://doi.org/10.1016/S0038-1101(03)00108-4