摘要
Large size (i.e. 1 mm × 1 mm) high power nitride-based light emitting diodes (LEDs) with Ni/Au and Ni/indium tin oxide (ITO) p-contacts were fabricated. It was found that the 200 mA forward voltage was 3.19 and 3.3 V for the power LEDs with Ni/Au and Ni/ITO p-contacts, respectively. On the other hand, although the 200 mA output power was only 11.59 mW for the power LED with Ni/Au p-contact, the 200 mA output power could reach 16.52 mW for the power LED with Ni/ITO p-contact. Such a significant increase could be attributed to the more transparent nature of Ni/ITO, as compared to Ni/Au. Preliminary life test also indicates that power LEDs with Ni/ITO p-contact are at least as reliable as power LEDs with Ni/Au p-contact.
原文 | English |
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頁(從 - 到) | 1565-1568 |
頁數 | 4 |
期刊 | Solid-State Electronics |
卷 | 47 |
發行號 | 9 |
DOIs | |
出版狀態 | Published - 2003 9月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學