TY - JOUR
T1 - High-pressure study on high-Tc (ZnPc) Bi-2223 oxides
AU - Lin, J. G.
AU - Huang, C. Y.
AU - Xue, Y. Y.
AU - Chu, C. W.
AU - Grigoryan, L.
AU - Yakushi, K.
N1 - Funding Information:
This work is supported in part by the National Science Council of the R. O. C. under grant No. NSC- 83-0208-M-002-010, and in part by the Texas Center for Superconductivity at the University of Houston and the Temple Foundation.
PY - 1994/9/20
Y1 - 1994/9/20
N2 - We have measured the pressure effect on the superconducting transition temperature Tc and the normal-state resistivity R for the high-Tc Bi-2223 oxides intercalated with zinc-phthalocyanine (ZnPc). At ambient pressure, Tc is degraded from 110 K to 90 K with the intercalation of 0.01 ZnPc per unit cell, and T changes its temperature dependence from metallic to semiconducting-like behavior, suggesting that the intercalation affects the electronic structure of the CuO2 plane significantly. We have obtained dTc/dP=1.9±0.3, 1.7±0.4 and 1.8±0.3 K/GPa for samples with Tc=110, 100 and 90 K, respectively. On the other hand, the normalized pressure effect on the normal-state resistivity dln R/dP is rather different for these three samples, changing from 2%/GPa to -20%/GPa. We have tentatively ascribed the nearly constant value of dTc/dP (≈2 K/GPa) to the pressure effect on the hopping integrals of the conducting holes, and the large variation in dln R/dP to the enhanced compressibility along the c-axis.
AB - We have measured the pressure effect on the superconducting transition temperature Tc and the normal-state resistivity R for the high-Tc Bi-2223 oxides intercalated with zinc-phthalocyanine (ZnPc). At ambient pressure, Tc is degraded from 110 K to 90 K with the intercalation of 0.01 ZnPc per unit cell, and T changes its temperature dependence from metallic to semiconducting-like behavior, suggesting that the intercalation affects the electronic structure of the CuO2 plane significantly. We have obtained dTc/dP=1.9±0.3, 1.7±0.4 and 1.8±0.3 K/GPa for samples with Tc=110, 100 and 90 K, respectively. On the other hand, the normalized pressure effect on the normal-state resistivity dln R/dP is rather different for these three samples, changing from 2%/GPa to -20%/GPa. We have tentatively ascribed the nearly constant value of dTc/dP (≈2 K/GPa) to the pressure effect on the hopping integrals of the conducting holes, and the large variation in dln R/dP to the enhanced compressibility along the c-axis.
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U2 - 10.1016/0921-4534(94)90159-7
DO - 10.1016/0921-4534(94)90159-7
M3 - Article
AN - SCOPUS:0028495853
VL - 231
SP - 177
EP - 181
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 1-2
ER -