This article reports the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were then deposited by DC magnetron sputtering onto intermediate graphene layer readily transferred onto the silicon substrate. The quality and structural characteristics of the graphene and AlN films were carefully inspected. Highly c-axis-oriented AlN crystal structures are observed via XRD patterns.
|頁（從 - 到）||111-116|
|期刊||Journal of the Chinese Society of Mechanical Engineers, Transactions of the Chinese Institute of Engineers, Series C/Chung-Kuo Chi Hsueh Kung Ch'eng Hsuebo Pao|
|出版狀態||Published - 2017 四月 1|
All Science Journal Classification (ASJC) codes