High-quality AlN grown with a single substrate temperature below 1200 °c

Chun Pin Huang, Chao Hung Wang, Chuan Pu Liu, Kun Yu Lai

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed NH3-flow condition, serving as an alternative for the commonly used temperature-varied buffer structure, which is often complicated and time-consuming. Inserting two pulsed-NH3-flow AlN layers in the epitaxial structure not only releases the lattice strain via the formation of three-dimensional nano-islands, but also smoothens the surface with prolonged lateral migration of Al adatoms. This effective growth technique substantially simplifies the manufacture of device-quality AlN.

原文English
文章編號7135
期刊Scientific reports
7
發行號1
DOIs
出版狀態Published - 2017 十二月 1

All Science Journal Classification (ASJC) codes

  • 多學科

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