We report high-quality topological insulator Bi2Te3 thin films grown on muscovite mica substrates by molecular beam epitaxy. The topographic and structural analysis revealed that the Bi2Te 3 thin films exhibited atomically smooth terraces over a large area and a high crystalline quality. Both weak antilocalization effect and quantum oscillations were observed in the magnetotransport of the relatively thin samples. A phase coherence length of 277 nm for a 6 nm thin film and a high surface mobility of 0.58 m2 V-1 s-1 for a 4 nm thin film were achieved. These results confirm that the thin films grown on mica are of high quality.
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