High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu; T. Tezuka; S. Sugita; Y. Watari; Y. Horikoshi; Y. K. Su; S. J. Chang

doi:10.1016/j.matchemphys.2004.02.027

High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

原文	English
頁（從 - 到）	161-164
頁數	4
期刊	Materials Chemistry and Physics
卷	86
發行號	1
DOIs	https://doi.org/10.1016/j.matchemphys.2004.02.027
出版狀態	Published - 2004 七月 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1016/j.matchemphys.2004.02.027

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AU - Tezuka, T.

AU - Sugita, S.

AU - Watari, Y.

AU - Horikoshi, Y.

AU - Su, Y. K.

AU - Chang, S. J.

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