High quality GaN epitaxial layers grown by modulated beam growth method

K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su, S. J. Chang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.

原文English
頁(從 - 到)161-164
頁數4
期刊Materials Chemistry and Physics
86
發行號1
DOIs
出版狀態Published - 2004 七月 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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