@article{86cba21d3dcf426faa5cb19004ed51a1,
title = "High quality GaN epitaxial layers grown by modulated beam growth method",
abstract = "High quality GaN epitaxial layers are grown by modulated beam growth method. It is found that we can achieve a smaller X-ray diffraction full-width-half-maximum, a much stronger photoluminescence intensity and a much smaller vertical striations from the GaN epitaxial layers grown under Ga flux modulation method. These observations can all be attributed to the enhanced lateral growth of the modulated beam growth method.",
author = "Liu, {K. T.} and T. Tezuka and S. Sugita and Y. Watari and Y. Horikoshi and Su, {Y. K.} and Chang, {S. J.}",
note = "Funding Information: The work was partly supported by the Japan Society for the Promotion of Science “Research for the Future” Program (JSPS-RFTF96P00103), and also COE Program “Molecular Nano-Engineering” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",
year = "2004",
month = jul,
day = "15",
doi = "10.1016/j.matchemphys.2004.02.027",
language = "English",
volume = "86",
pages = "161--164",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "1",
}