@inproceedings{5af3d240698a42159ba6dcdf01cfce55,
title = "High quality nitride-based material grow on silicon substrate by metal organic vapor phase epitaxy",
abstract = "In recent years, the silicon substrate got more and more attention in the compound semiconductor field, because the silicon substrate has many advantages, such as lower cost, larger scale, and higher thermal conductivities. Therefore, we try to grow the high quality III-nitride materials on the silicon substrate in this dissertation. We use the step grading AlGaN intermediate layers to grow the high quality GaN on Si(111) substrate. The grading AlGaN can effectively release the residual stress, which was produced by the larger lattice mismatch between the GaN and Si(111) substrate. The graded AlGaN intermediate layer can also decrease the dislocation densities in the GaN epilayer.",
author = "Hon Kuan and Chang, {Shoou Jinn} and Chang, {Sheng Hsiung} and Huang, {Chieh Chih} and Wu, {Cheng Peng} and Jhang, {Siang Fong} and Liu, {Bo Jun}",
note = "Publisher Copyright: {\textcopyright} 2015 Taylor & Francis Group, London.; 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014 ; Conference date: 17-10-2014 Through 22-10-2014",
year = "2015",
doi = "10.1201/b18737-31",
language = "English",
isbn = "9781138027527",
series = "Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014",
publisher = "CRC Press/Balkema",
pages = "127--130",
editor = "Teen-Hang Meen and Prior, {Stephen D.} and Lam, {Artde Donald Kin-Tak}",
booktitle = "Innovation in Design, Communication and Engineering - Proceedings of the 3rd International Conference on Innovation, Communication and Engineering, ICICE 2014",
}