High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

F. Y. Huang; M. A. Chu; M. O. Tanner; K. L. Wang; G. D. U'Ren; M. S. Goorsky

doi:10.1063/1.126442

High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

F. Y. Huang, M. A. Chu, M. O. Tanner, K. L. Wang, G. D. U'Ren, M. S. Goorsky

電機資訊學院

研究成果: Article › 同行評審

54 引文斯高帕斯（Scopus）

摘要

We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.

原文	English
頁（從 - 到）	2680-2682
頁數	3
期刊	Applied Physics Letters
卷	76
發行號	19
DOIs	https://doi.org/10.1063/1.126442
出版狀態	Published - 2000 5月 8

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.126442

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AU - U'Ren, G. D.

AU - Goorsky, M. S.

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AB - We report on the growth and characterization of high-quality strain-relaxed SiGe alloys on a compliant silicon-on-insulator (SOI) substrate. The annealing temperature required for strain transfer has been reduced through boron implantation to the buried oxide, leading to a high quality SiGe alloy free from dislocations as evident from the near-band gap photoluminescence. Nearly complete strain relaxation (∼95%) for SiGe alloy of a thickness beyond the conventional critical thickness has been obtained.

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High-quality strain-relaxed SiGe alloy grown on implanted silicon-on-insulator substrate

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