High-quality ultrathin chemical-vapor-deposited Ta2O 5 capacitors prepared by high-density plasma annealing

C. H. Liu, S. J. Chang, J. F. Chen, S. C. Chen, J. S. Lee, U. H. Liaw

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

Highly reliable ultrathin low-pressure chemical-vapor-deposited (LPCVD) tantalum pentoxide (Ta2O5) capacitors were fabricated by using high-density plasma (HDP) annealing in N2O at 400 °C after film deposition. It was found that HDP annealing in N2O could significantly reduce the leakage current of Ta2O5 capacitors so as to produce better time-dependent dielectric breakdown characteristics than either conventional oxygen-plasma annealing or high-density plasma annealing in O2. It was also found that HDP annealing in N2O will not significantly increase the thickness of interface layer between Ta2O5 and the underlying silicon bottom electrode. Therefore, highly reliable ultrathin Ta2O 5 capacitors can be fabricated by using HDP annealing in N 2O. The leakage current mechanism was also investigated. It was found that Poole-Frenkel emission and Fowler Nordheim (FN) tunneling was the main leakage mechanism in low and high electric field, respectively, as for the deposited Ta2O5 films. For the N2O HDP-annealed Ta2O5 films, it was found that, the main leakage mechanism was Schottky emission in low electric field and Poole-Frenkel emission in high electric field.

原文English
頁(從 - 到)234-241
頁數8
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
106
發行號3
DOIs
出版狀態Published - 2004 二月 15

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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