High Quality ZnO Thin Films on InP Substrates Prepared by Radio Frequency Magnetron Sputtering. I. Material Study

S. J. Chang, Y. K. Su, Y. P. Shei

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

High quality ZnO thin films were deposited onto InP substrates by radio frequency magnetron sputtering. It was found that the characteristics of ZnO film depend on deposition parameters, and a detailed study was performed. By adjusting these parameters, we obtained a ZnO thin film with an extremely sharp x-ray diffraction peak with a 0.183° full width at half-maximum. The resistivity of the deposited ZnO film is 1010 Ω cm and its refractive index is close to that of single crystal ZnO. These results indicate that the quality of these ZnO thin films is acceptable for the fabrication of a surface acoustic wave device on InP substrates.

原文English
頁(從 - 到)381-384
頁數4
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
13
發行號2
DOIs
出版狀態Published - 1995 三月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜

指紋

深入研究「High Quality ZnO Thin Films on InP Substrates Prepared by Radio Frequency Magnetron Sputtering. I. Material Study」主題。共同形成了獨特的指紋。

引用此