High quality ZnO thin films were deposited onto InP substrates by radio frequency magnetron sputtering. It was found that the characteristics of ZnO film depend on deposition parameters, and a detailed study was performed. By adjusting these parameters, we obtained a ZnO thin film with an extremely sharp x-ray diffraction peak with a 0.183° full width at half-maximum. The resistivity of the deposited ZnO film is 1010 Ω cm and its refractive index is close to that of single crystal ZnO. These results indicate that the quality of these ZnO thin films is acceptable for the fabrication of a surface acoustic wave device on InP substrates.
|頁（從 - 到）||381-384|
|期刊||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版狀態||Published - 1995 三月|
All Science Journal Classification (ASJC) codes