This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.
|出版狀態||Published - 2002 一月 1|
|事件||Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States|
持續時間: 2002 十月 20 → 2002 十月 23
|Other||Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)|
|期間||02-10-20 → 02-10-23|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering