High reliability in low noise InGaP gated PHEMTs

C. S. Wang, H. K. Huang, Yeong-Her Wang, C. L. Wu, C. S. Chang

研究成果: Paper

1 引文 (Scopus)

摘要

This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

原文English
頁面81-84
頁數4
出版狀態Published - 2002 一月 1
事件Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
持續時間: 2002 十月 202002 十月 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
國家United States
城市Monterey, CA
期間02-10-2002-10-23

指紋

High electron mobility transistors
Thermal stress
Noise figure
Transconductance
Capacitance

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L., & Chang, C. S. (2002). High reliability in low noise InGaP gated PHEMTs. 81-84. 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.
Wang, C. S. ; Huang, H. K. ; Wang, Yeong-Her ; Wu, C. L. ; Chang, C. S. / High reliability in low noise InGaP gated PHEMTs. 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.4 p.
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Wang, CS, Huang, HK, Wang, Y-H, Wu, CL & Chang, CS 2002, 'High reliability in low noise InGaP gated PHEMTs' 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 02-10-20 - 02-10-23, 頁 81-84.

High reliability in low noise InGaP gated PHEMTs. / Wang, C. S.; Huang, H. K.; Wang, Yeong-Her; Wu, C. L.; Chang, C. S.

2002. 81-84 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

研究成果: Paper

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N2 - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

AB - This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In0.49Ga0.51P/In0.15Ga0.85 As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 × 160 μm2. The DC-stress conditions are 1) VDS = 6V, VGS = 0V and 2) IG = -8 mA (50mA/mm). The ranging of thermal-stress is from 100°C to 250°C. The noise characteristics were measured at 12 GHz and DC bias condition is VDS = 2 V, IDS = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NFmin and associated power gain, Ga after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.

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Wang CS, Huang HK, Wang Y-H, Wu CL, Chang CS. High reliability in low noise InGaP gated PHEMTs. 2002. 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.