High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate

Kuan Ting Liu, Shoou Jinn Chang, Sean Wu

研究成果: Article

摘要

A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

原文English
頁(從 - 到)363-370
頁數8
期刊Sensors and Materials
29
發行號4
DOIs
出版狀態Published - 2017 一月 1

指紋

trapezoids
Aluminum Oxide
Photodetectors
Sapphire
photometers
sapphire
Substrates
Metals
Dark currents
Metallorganic chemical vapor deposition
dark current
Photocurrents
rejection
metals
metalorganic chemical vapor deposition
photocurrents
Photons
Scattering
Semiconductor materials
augmentation

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Materials Science(all)

引用此文

@article{2ec61b44fe3d48268ee56feab0d37d75,
title = "High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate",
abstract = "A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476{\%} enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.",
author = "Liu, {Kuan Ting} and Chang, {Shoou Jinn} and Sean Wu",
year = "2017",
month = "1",
day = "1",
doi = "10.18494/SAM.2017.1517",
language = "English",
volume = "29",
pages = "363--370",
journal = "Sensors and Materials",
issn = "0914-4935",
publisher = "M Y U Scientific Publishing Division",
number = "4",

}

TY - JOUR

T1 - High responsivity in GaN ultraviolet photodetector grown on a periodic trapezoid-column patterned sapphire substrate

AU - Liu, Kuan Ting

AU - Chang, Shoou Jinn

AU - Wu, Sean

PY - 2017/1/1

Y1 - 2017/1/1

N2 - A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

AB - A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.

UR - http://www.scopus.com/inward/record.url?scp=85019165695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85019165695&partnerID=8YFLogxK

U2 - 10.18494/SAM.2017.1517

DO - 10.18494/SAM.2017.1517

M3 - Article

AN - SCOPUS:85019165695

VL - 29

SP - 363

EP - 370

JO - Sensors and Materials

JF - Sensors and Materials

SN - 0914-4935

IS - 4

ER -