High responsivity indium-zinc-oxide ultraviolet thin-film phototransistor

Sheng Po Chang, Wen Chen Hua, Jun Yi Li

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this study, we investigate the electrical and optoelectronic property of the amorphous indium zinc oxide (a-IZO) thin-film phototransistor. We realize an ultraviolet (UV) photodetector by using a wide-bandgap a-IZO thin film as the channel layer material of the TFT. The fabricated device has a threshold voltage of-1.5 V, on-off current ratio of 104, subthreshold swing of 0.4 V/decade, and mobility of 12 cm2/Vs under dark environment. As a UV photodetector, the responsivity of the device is 5.87 A/W and the rejection ratio is 5°68 × 105 at a gate bias of-5 V under 300 nm illumination.

原文English
頁(從 - 到)4864-4866
頁數3
期刊Journal of Nanoscience and Nanotechnology
17
發行號7
DOIs
出版狀態Published - 2017 一月 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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