TY - JOUR
T1 - High-responsivity InGaAs/InP quantum-well infrared photodetectors prepared by metal organic chemical vapor deposition
AU - Wang, Yung Sheng
AU - Chang, Shoou Jinn
AU - Chou, Shu Ting
AU - Lin, Shih Yen
AU - Lin, Wei
PY - 2009/4
Y1 - 2009/4
N2 - Ten-period InGaAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region prepared by metal organic chemical vapor deposition (MOCVD) are investigated in this study. At a detection wavelength of 8 mm, a high responsivity of 20A/W is observed for the unstrained device, which is attributed to the higher gain of the InP-based material than that of the GaAs-based material. Compared with the unstrained QWIP, the InGaAs/InP QWIP with 1% compressive strain (CS) in the QWs has demonstrated three orders of magnitude dark current depressions so that higher peak detectivity of 2.9 × 1010 cm·Hz1/2/W at 1.3V is observed for the device.
AB - Ten-period InGaAs/InP quantum-well infrared photodetectors (QWIPs) with and without compressive strain in the quantum-well region prepared by metal organic chemical vapor deposition (MOCVD) are investigated in this study. At a detection wavelength of 8 mm, a high responsivity of 20A/W is observed for the unstrained device, which is attributed to the higher gain of the InP-based material than that of the GaAs-based material. Compared with the unstrained QWIP, the InGaAs/InP QWIP with 1% compressive strain (CS) in the QWs has demonstrated three orders of magnitude dark current depressions so that higher peak detectivity of 2.9 × 1010 cm·Hz1/2/W at 1.3V is observed for the device.
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U2 - 10.1143/JJAP.48.04C108
DO - 10.1143/JJAP.48.04C108
M3 - Article
AN - SCOPUS:77952533315
SN - 0021-4922
VL - 48
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04C108
ER -