High Responsivity MgxZn1-xO Film UV Photodetector Grown by RF Sputtering

Jyun Yi Li, Sheng Po Chang, Hung Hsu Lin, Shoou Jinn Chang

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

This letter focused on MgxZn1-xO thin films grown on quartz substrates using radio frequency magnetron sputtering. The films were then used to fabricate metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with different flow rates of argon gas (30, 25, and 20 sccm) and oxygen gas (0, 5, and 10 sccm). We obtained the best parameters for the 25:5 sccm gas flow MgxZn1-xO UV PD. The samples' Mg content was relatively high, contributing to low dark current. Furthermore, the oxygen flow rate for 5 sccm was manipulated properly, so the film was more conductive, having a maximum responsivity of 2.133 A/W with 280-nm illumination and 10 V applied bias. The maximum photocurrent was 1.3 μA, and the device's ON/OFF current switching characteristic was very stable.

原文English
文章編號7052296
頁(從 - 到)978-981
頁數4
期刊IEEE Photonics Technology Letters
27
發行號9
DOIs
出版狀態Published - 2015 五月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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