High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

研究成果: Article

10 引文 (Scopus)

摘要

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.

原文English
文章編號126
期刊Materials
10
發行號2
DOIs
出版狀態Published - 2017 一月 1

指紋

Phototransistors
Sputtering
Zinc Oxide
Thin films
Magnesia
Thin film transistors
Photodetectors
Zinc oxide
Threshold voltage
Optoelectronic devices
Oxide films
Energy gap
Lighting

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

引用此文

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abstract = "We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.",
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AU - Li, Jyun Yi

AU - Chang, Sheng Po

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AB - We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.

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