High responsivity MgZnO ultraviolet thin-film phototransistor developed using radio frequency sputtering

Jyun Yi Li, Sheng Po Chang, Ming Hung Hsu, Shoou Jinn Chang

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-offcurrent ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of -5 V under 290 nm illumination.

原文English
文章編號126
期刊Materials
10
發行號2
DOIs
出版狀態Published - 2017

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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