High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric

T. H. Chang, C. J. Chiu, W. Y. Weng, S. J. Chang, T. Y. Tsai, Z. D. Huang

研究成果: Article同行評審

60 引文 斯高帕斯(Scopus)

摘要

This study investigates the electrical performance of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with a Ta 2O5 gate dielectric under monochromatic illumination. The relationship between the phototransistor performance and oxygen partial pressure is determined. The oxygen content of the a-IGZO channel significantly affects the electrical and optical characteristics of a-IGZO TFTs. At applied gate biases of 0, 0, and 0.25 V, oxygen partial pressures of 0%, 0.1%, and 0.2% yielded measured device responsivities of 0.23, 0.44, and 4.75 A/W, respectively. Oxygen content can be used to control the mobility of TFTs, which can amplify photocurrent and enhance the responsivity of a-IGZO TFTs with a Ta2O5 gate dielectric.

原文English
文章編號261112
期刊Applied Physics Letters
101
發行號26
DOIs
出版狀態Published - 2012 十二月 24

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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