High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai, W. J. Lin, Y. C. Cheng

研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)

摘要

Gallium nitride p-i-n ultraviolet photodiodes with low-temperature (LT)-GaN interlayer have been fabricated. It was found that the dark current of photodiode with LT-GaN interlayer is as small as 143 pA at 5 V reverse bias. It was also found that the responsivity of the photodiode with LT-GaN interlayer can be enhanced at a small electric field (∼0.4 MVcm) due to the carrier multiplication effect. The UV photocurrent gain of 13 and large ionization coefficient (α=3.1× 105 cm-1) were also observed in the detector with LT-GaN interlayer. Furthermore, we can achieve a large peak responsivity of 2.27 AW from the photodiode with LT-GaN interlayer.

原文English
文章編號173502
期刊Applied Physics Letters
91
發行號17
DOIs
出版狀態Published - 2007

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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